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absolute maximum ratings (per die) parameter n-channel p-channel units i d @ v gs = 4.5v, t c = 25c continuous drain current 0.89 -0.65 i d @ v gs = 4.5v, t c =100c continuous drain current 0.56 -0.41 i dm pulsed drain current 3.56 -2.6 p d @ t c = 25c max. power dissipation 1.0 1.0 w linear derating factor 0.01 0.01 w/c v gs gate-to-source voltage 10 10 v e as single pulse avalanche energy 20 34 mj i ar avalanche current 0.89 -0.65 a e ar repetitive avalanche energy 0.1 0.1 mj dv/dt peak diode recovery dv/dt 4.7 -5.6 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 0.2 (typical) g pre-irradiation c a radiation hardened logic level power mosfet surface mount (lcc-6) www.irf.com 1

lcc-6 IRHLUC7670Z4 60v, combination 1n-1p-channel technology features: 5v cmos and ttl compatible low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed light weight 2n7632uc product summary part number radiation level r ds(on) i d channel 0.75 ? 0.89a n 1.60 ? -0.65a p 0.75 ? 0.89a n 1.60 ? -0.65a p IRHLUC7670Z4 irhluc7630z4 100k rads (si) 300k rads (si) pd-97268a international rectifiers r7 tm logic level power mosfets provide simple solution to interfacing cmos and ttl controlcircuits to power devices in space and other radiation environments.the threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.this is achieved while maintaining single event gate rupture and single event burnout immunity. the device is ideal when used to interface directly with most logic gates, linear ics, micro-controllers, and other device types that operate from a 3.3-5v source. it may also be used to increase the output current of a pwm, voltage comparator or an operational amplifier where the logic level drive signal is available. downloaded from: http:///
IRHLUC7670Z4, 2n7632uc pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics (per n channel die) parameter min typ max units test conditions i s continuous source current (body diode) 0.89 i sm pulse source current (body diode) 3.56 v sd diode forward voltage 1.2 v t j = 25c, i s = 0.89a, v gs = 0v t rr reverse recovery time 65 ns t j = 25c, i f = 0.89a, di/dt 100a/ s q rr reverse recovery charge 67 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on international rectifier website. thermal resistance (per n channel die) parameter min typ max units test conditions r thja junction-to-ambient 125

c/w electrical characteristics for n-channel die @tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 60 v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown 0.07 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.75 ? v gs = 4.5v, i d = 0.56a resistance v gs(th) gate threshold voltage 1.0 2.0 v v ds = v gs , i d = 250 a ? v gs(th) / ? t j gate threshold voltage coefficient -4.5 mv/c g fs forward transconductance 0.25 s v ds = 10v, i ds = 0.56a i dss zero gate voltage drain current 1.0 v ds = 48v ,v gs = 0v 1 0 v ds = 48v, v gs = 0v, t j =125c i gss gate-to-source leakage forward 100 v gs = 10v i gss gate-to-source leakage reverse -100 v gs = -10v q g total gate charge 3.6 v gs = 4.5v, i d = 0.89a q gs gate-to-source charge 1.5 nc v ds = 30v q gd gate-to-drain (miller) charge 1.8 t d (on) turn-on delay time 8.0 v dd = 30v, i d = 0.89a, t r rise time 15 v gs = 5.0v, r g = 24 ? t d (off) turn-off delay time 30 t f fall time 12 l s + l d total inductance 33 c iss input capacitance 145 v gs = 0v, v ds = 25v c oss output capacitance 43 pf f = 1.0mhz c rss reverse transfer capacitance 2.5 na nh ns a r g gate resistance 8.2 ? f = 1.0mhz, open drain measured from the center of drain pad to center of source pad downloaded from: http:///
www.irf.com 3 pre-irradiation IRHLUC7670Z4, 2n7632uc for footnotes refer to the last page source-drain diode ratings and characteristics (per p channel die) parameter min typ max units test conditions i s continuous source current (body diode) -0.65 i sm pulse source current (body diode) -2.6 v sd diode forward voltage -5.0 v t j = 25c, i s = -0.65a, v gs = 0v t rr reverse recovery time 35 ns t j = 25c, i f = -0.65a, di/dt -100a/ s q rr reverse recovery charge 9.8 nc v dd -25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance (per p channel die) parameter min typ max units test conditions r thja junction-to-ambient 125

c/w note: corresponding spice and saber models are available on international rectifier website. electrical characteristics for p-channel die @tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage -60 v v gs = 0v, i d = -250 a ? bv dss / ? t j temperature coefficient of breakdown -0.06 v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state 1.60 ? v gs = -4.5v, i d = -0.41a resistance v gs(th) gate threshold voltage -1.0 -2.0 v v ds = v gs , i d = -250 a ? v gs(th) / ? t j gate threshold voltage coefficient 3.6 mv/c g fs forward transconductance 0.5 s v ds = -10v, i ds = -0.41a i dss zero gate voltage drain current -1.0 v ds = -48v ,v gs = 0v -10 v ds = -48v, v gs = 0v, t j =125c i gss gate-to-source leakage forward -100 v gs = -10v i gss gate-to-source leakage reverse 100 v gs = 10v q g total gate charge 3.6 v gs = -4.5v, i d = -0.65a q gs gate-to-source charge 1.5 nc v ds = -30v q gd gate-to-drain (miller) charge 1.8 t d (on) turn-on delay time 23 v dd = -30v, i d = -0.65a, t r rise time 22 v gs = -5.0v, r g = 24 ? t d (off) turn-off delay time 32 t f fall time 26 l s + l d total inductance 33 c iss input capacitance 147 v gs = 0v, v ds = -25v c oss output capacitance 46 pf f = 1.0mhz c rss reverse transfer capacitance 8.1 na nh ns a r g gate resistance 52 ? f = 1.0mhz, open drain measured from the center of drain pad to center of source pad downloaded from: http:///
IRHLUC7670Z4, 2n7632uc pre-irradiation 4 www.irf.com international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2.

radiation characteristics fig a. typical single event effect, safe operating area table 1. electrical characteristics for n-channel device @tj = 25c, post total dose irradiation parameter upto 300k rads (si) 1 units test conditions min max bv dss drain-to-source breakdown voltage 60 v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 1.0 2.0 v gs = v ds , i d = 250a i gss gate-to-source leakage forward 100 na v gs = 10v i gss gate-to-source leakage reverse -100 v gs = -10v i dss zero gate voltage drain current 1.0 a v ds = 48v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-39) 0.60 ? v gs = 4.5v, i d = 0.56a r ds(on) static drain-to-source on-state v sd diode forward voltage 1.2 v v gs = 0v, i d = 0.89a resistance (lcc-6) 0.75 ? v gs = 4.5v, i d = 0.56a 1. part numbers IRHLUC7670Z4, irhluc7630z4 table 2. typical single event effect safe operating area let energy range vds (v) (mev/(m g /cm 2 )) (mev) (m) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v -2v -4v -5v -6v -7v 38 5% 300 7.5% 38 7.5% 60 60 60 60 60 35 62 5% 355 7.5% 33 7.5% 60 60 60 60 30 - 85 5% 380 7.5% 29 7.5% 60 60 60 40 - - 0 10 20 30 40 50 60 70 -7 -6 -5 -4 -3 -2 -1 0 vgs vds let=38 5% let=62 5% let=85 5% downloaded from: http:///
www.irf.com 5 pre-irradiation IRHLUC7670Z4, 2n7632uc international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics fig a. typical single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2.

table 1. electrical characteristics for p-channel device @tj = 25c, post total dose irradiation parameter upto 300k rads (si) 1 units test conditions min max bv dss drain-to-source breakdown voltage -60 v v gs = 0v, i d = -250a v gs(th) gate threshold voltage -1.0 -2.0 v gs = v ds , i d = -250a i gss gate-to-source leakage forward -100 na v gs = -10v i gss gate-to-source leakage reverse 100 v gs = 10v i dss zero gate voltage drain current -1.0 a v ds = -48v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-39) 1.40 ? v gs = -4.5v, i d = -0.41a r ds(on) static drain-to-source on-state v sd diode forward voltage -5.0 v v gs = 0v, i d = -0.65a resistance (lcc-6) 1.60 ? v gs = -4.5v, i d = -0.41a 1. part numbers IRHLUC7670Z4, irhluc7630z4 table 2. typical single event effect safe operating area let energy range vds (v) (mev/(m g /cm 2 )) (mev) (m) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v 2v 4v 5v 6v 7v 38 5% 300 7.5% 38 7.5% -60 -60 -60 -60 -60 -50 62 5% 355 7.5% 33 7.5% -60 -60 -60 -60 -60 - 85 5% 380 7.5% 29 7.5% -60 -60 -60 -60 - - -70 -60 -50 -40 -30 -20 -10 0 01234567 bias vgs (v) bias vds (v) let=38 5% let=62 5% let=85 5% downloaded from: http:///
IRHLUC7670Z4, 2n7632uc pre-irradiation 6 www.irf.com

n-channel die 1 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top 10v 7.0v 5.0v 4.0v 3.5v 3.0v 2.75v bottom 2.5v 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.5v vgs top 10v 7.0v 5.0v 4.0v 3.5v 3.0v 2.75v bottom 2.5v 22 . 533 . 544 . 55 v gs , gate-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 25v 6 0 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 4.5v i d = 0.89a downloaded from: http:///
www.irf.com 7 pre-irradiation IRHLUC7670Z4, 2n7632uc fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current fig 7. typical drain-to-source breakdown voltage vs temperature fig 8. typical threshold voltage vs temperature 0 0.5 1.0 1.5 2.0 2.5 3.0 i d , drain current (a) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) t j = 25c t j = 150c vgs = 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 55 65 75 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 1.0ma -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 150ma 2 3 4 5 6 7 8 9 10 11 12 v gs, gate -to -source voltage (v) 0 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 0.89a t j = 25c t j = 150c n-channel die 1 downloaded from: http:///
IRHLUC7670Z4, 2n7632uc pre-irradiation 8 www.irf.com

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n-channel die 1 1 10 100 v ds , drain-to-source voltage (v) 0 40 80 120 160 200 240 280 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 0.5 1.0 1.5 2.0 2.5 v sd , source-to-drain voltage (v) 0.01 0.1 1 10 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c fig 11. typical source-to-drain diode forward voltage 00.511.522.533.54 q g, total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v v ds = 12v i d = 0.89a for test circuit see figure 17 25 50 75 100 125 150 t c , case temperature (c) 0 0.2 0.4 0.6 0.8 1.0 i d , d r a i n c u r r e n t ( a ) downloaded from: http:///
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n-channel die 1 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 1000 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc !

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p t t dm 1 2 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100 s dc 25 50 75 100 125 150 starting t j , junction temperature (c) 0 8 16 24 32 40 48 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.40a 0.56a bottom 0.89a downloaded from: http:///
IRHLUC7670Z4, 2n7632uc pre-irradiation 10 www.irf.com n-channel die 1 fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 16b. unclamped inductive waveforms t p v (br)dss i as q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - )* fig 17b. gate charge test circuit fig 17a. basic gate charge waveform v ds 90%10% v gs t d(on) t r t d(off) t f fig 18a. switching time test circuit fig 18b. switching time waveforms
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0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top -10v -5.0v -4.0v -3.5v -3.0v -2.5v -2.25v bottom -2..0v -2.0v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c vgs top -10v -5.0v -4.0v -3.5v -3.0v -2.5v -2.25v bottom -2..0v -2.0v 22 . 533 . 544 . 5 -v gs , gate-to-source voltage (v) 0.1 1 10 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = -25v 6 0 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = -4.5v i d = -0.65a downloaded from: http:///
IRHLUC7670Z4, 2n7632uc pre-irradiation 12 www.irf.com -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 - v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = -50a i d = -250a i d = -1.0ma i d = -150ma p-channel die 2 fig 23. typical on-resistance vs gate voltage fig 24. typical on-resistance vs drain current fig 25. typical drain-to-source breakdown voltage vs temperature fig 26. typical threshold voltage vs temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 50 60 70 80 - v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = -1.0ma 0 0.5 1.0 1.5 2.0 2.5 3.0 -i d , drain current (a) 0.8 1.2 1.6 2.0 2.4 2.8 3.2 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) t j = 25c t j = 150c vgs = -4.5v 2 3 4 5 6 7 8 9 10 11 12 -v gs, gate -to -source voltage (v) 0 0.5 1 1.5 2 2.5 3 3.5 4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -0.65a t j = 25c t j = 150c downloaded from: http:///
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p-channel die 2 1 10 100 -v ds , drain-to-source voltage (v) 0 40 80 120 160 200 240 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss !

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25 50 75 100 125 150 t c , case temperature (c) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 - i d , d r a i n c u r r e n t ( a ) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5.0 -v sd , source-to-drain voltage (v) 0.01 0.1 1 10 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 q g, total gate charge (nc) 0 2 4 6 8 10 12 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -48v v ds = -30v v ds = -12v i d = -0.65a for test circuit see figure 35 downloaded from: http:///
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p-channel die 2 !

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1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 1000 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 70 80 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -0.29a -0.41a bottom -0.65a p t t dm 1 2 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) dc downloaded from: http:///
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t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v v gs

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d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge )* v ds 90% 10% v gs t d(on) t r t d(off) t f
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IRHLUC7670Z4, 2n7632uc pre-irradiation 16 www.irf.com total dose irradiation with v gs bias. 10 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a total dose irradiation with v ds bias. 48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a v dd = -25v, starting t j = 25c, l= 161mh, peak i l = -0.65a, v gs = -10v i sd -0.65a, di/dt -150a/ s, v dd -60v, t j 150c repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 50.4mh, peak i l = 0.89a, v gs = 10v i sd 0.89a, di/dt 200a/ s, v dd 60v, t j 150c pulse width 300 s; duty cycle 2% case outline and dimensions lcc-6 footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 10/2010 3. controlling dimension: inch. 2. all dime ns ions are s hown in millimet ers [inches ]. 1. out l ine conf orms t o mil -prf -19500/255l not es : die 1 ( n ch ) die 2 ( p ch )pin name pin # pin name pin # drain - 1 drain - 4 gate - 2 gate - 5 source - 6 source - 3 0.170 0.245 0.080 max. 3 5 4 2 6 1 pin 1 pin 1 0.025 0.090 0.065 0.008 0.100 0.050 0.010 0.010 downloaded from: http:///

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